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2N7002T -- N-Channel Enhancement Mode Field Effect Transistor
October 2007
2N7002T
N-Channel Enhancement Mode Field Effect Transistor
Features
* Low On-Resistance * Low Gate Threshold Voltage * Low Input Capacitance * Fast Switching Speed * Low Input/Output Leakage * Ultra-Small Surface Mount Package * Lead Free/RoHS Compliant
D
S
G
SOT - 523F
Marking : AA
Absolute Maximum Ratings *
Symbol
VDSS VDGR VGSS ID Drain-Source Voltage
Ta = 25C unless otherwise noted
Parameter
Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Drain Current Continuous Pulsed Continuous Continuous @ 100C Pulsed
Value
60 60 20 40 115 73 800 150 -55 to +150
Units
V V V
mA C C
TJ TSTG
Junction Temperature Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
PD RJA
Parameter
Total Device Dissipation Derating above TA = 25C Thermal Resistance, Junction to Ambient *
Value
200 1.6 625
Units
mW mW/C C/W
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,
(c) 2007 Fairchild Semiconductor Corporation 2N7002T Rev. A 1
www.fairchildsemi.com
2N7002T -- N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
Symbol Parameter Off Characteristics (Note1)
BVDSS IDSS IGSS
TC = 25C unless otherwise noted
Test Condition
MIN
TYP
MAX
Units
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
VGS= 0V, ID=10uA VDS= 60V, VGS= 0V VDS= 60V, VGS= 0V, @TC = 125C VGS= 20V, VDS= 0V
60 -
78 0.001 7 0.2
1.0 500 10
V uA nA
On Characteristics (Note1)
VGS(th) RDS(ON) ID(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 0.5 80 1.76 1.6 2.53 1.43 356.5 2.0 7.5 13.5 V A mS Satic Drain-Source On-Resistance VGS = 5V, ID = 0.05A, VGS = 10V, ID = 0.5A, @Tj = 125C On-State Drain Current Forward Transconductance VGS = 10V, VDS= 7.5V VDS = 10V, ID = 0.2A
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS= 0V, f = 1.0MHz 37.8 12.4 6.5 50 25 7.0 pF pF pF
Switching Characteristics
tD(ON) tD(OFF) Turn-On Delay Time Turn-Off Delay Time VDD = 30V, ID = 0.2A, VGEN= 10V RL = 150, RGEN = 25 5.85 12.5 20 20 ns
Note1 : Short duration test pulse used to minimize self-heating effect.
(c) 2007 Fairchild Semiconductor Corporation 2N7002T Rev. A 2
www.fairchildsemi.com
2N7002T -- N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
Figure 1. On-Region Characteristics
1.6
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current
3.0
ID. DRAIN-SOURCE CURRENT(A)
RDS(on), () DRANI-SOURCE ON-RESISTANCE
1.4 1.2 1.0 0.8 0.6 0.4 0.2
VGS = 10V 5V
VGS = 3V
4V
4.5V
5V 6V
2.5
4V
2.0
10V
1.5
3V
9V 8V 7V
2V
0.0 0 1 2 3 4 5 6 7 8 9 10 1.0 0.0 0.2 0.4 0.6 0.8 1.0
VDS. DRAIN-SOURCE VOLTAGE (V)
ID. DRAIN-SOURCE CURRENT(A)
Figure 3. On-Resistance Variation with Temperature
3.0
Figure 4. On-Resistance Variation with Gate-Source Voltage
3.0
RDS(on) () DRANI-SOURCE ON-RESISTANCE
2.5
VGS = 10V ID = 500 mA
RDS(on), () DRANI-SOURCE ON-RESISTANCE
2.5
2.0
ID = 500 mA
2.0
1.5
ID = 50 mA
1.5
1.0
0.5 -50
1.0
0 50 100
o
150
2
4
6
8
10
TJ. JUNCTION TEMPERATURE( C)
VGS. GATE-SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
1.0
o
Figure 6. Gate Threshold Variation with Temperature
Vth, Gate-Source Threshold Voltage (V)
2.5
ID. DRAIN-SOURCE CURRENT(A)
VDS = 10V
0.8
TJ = -25 C 150 C 25 C 125 C
o o o
VGS = VDS
2.0
0.6
ID = 1 mA ID = 0.25 mA
1.5
75 C
0.4
o
0.2
0.0 2 3 4 5 6
1.0 -50
0
50
100
o
150
VGS. GATE-SOURCE VOLTAGE (V)
TJ. JUNCTION TEMPERATURE( C)
(c) 2007 Fairchild Semiconductor Corporation 2N7002T Rev. A 3
www.fairchildsemi.com
2N7002T -- N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature
VGS = 0 V
Figure 8. Power Derating
250
IS Reverse Drain Current, [mA]
PC[mW], POWER DISSIPATION
150 C
100
o
200
150
25 C
10
o
100
-55 C
o
50
1 0.0
0.2
0.4
0.6
0.8
1.0
0 0 25
o
50
75
100
125
150
175
VSD, Body Diode Forward Voltage [V]
Ta[ C], AMBIENT TEMPERATURE
(c) 2007 Fairchild Semiconductor Corporation 2N7002T Rev. A 4
www.fairchildsemi.com
2N7002T -- N-Channel Enhancement Mode Field Effect Transistor
Package Dimensions
SOT-523F
Dimensions in Millimeters
(c) 2007 Fairchild Semiconductor Corporation 2N7002T Rev. A 5
www.fairchildsemi.com
2N7002T 2N7002T N-Channel Enhancement Mode Field Effect Transistor
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I30
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
(c) 2007 Fairchild Semiconductor Corporation 2N7002T Rev. A 6
www.fairchildsemi.com

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